Semiconductor device and method for evaluating semiconductor device
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United States of America Patent
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Oct 6, 2015
Grant Date -
Jun 5, 2014
app pub date -
Nov 27, 2013
filing date -
Nov 30, 2012
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Abstract
A semiconductor layer with a low density of trap states is provided. A transistor with stable electrical characteristics is provided. A transistor having high field-effect mobility is provided. A semiconductor device including the transistor is provided. A method for evaluating a semiconductor layer is provided. A method for evaluating a transistor is provided. A method for evaluating a semiconductor device is provided. Provided is, for example, a semiconductor layer with a low defect density which can be used for a channel formation region of a transistor, a transistor including a semiconductor layer with a low defect density in a channel formation region, or a semiconductor device including the transistor.
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