Semiconductor stacked body, method for manufacturing same, and semiconductor element
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United States of America Patent
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Oct 6, 2015
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Feb 20, 2014
app pub date -
Apr 3, 2012
filing date -
Apr 8, 2011
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Abstract
A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a Ga2O3 substrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AlN buffer layer formed on the Ga2O3 substrate, and a nitride semiconductor layer formed on the AlN buffer layer.
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