Process of forming a back side illumination image sensor
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United States of America Patent
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Oct 6, 2015
Grant Date -
Dec 18, 2014
app pub date -
Sep 2, 2014
filing date -
Jan 12, 2010
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Abstract
A process of forming a back side illumination (BSI) image sensor is disclosed. An n-type implant is formed in a semiconductor substrate, and a p-type implant region, surrounding n-type in each pixel, is formed in the n-type implant such that in cross sectional view an n-type implant region is sandwiched between the two p-type implant regions. A transfer gate is formed on the semiconductor substrate such that the transfer gate entirely covers the n-type implant region and at least partially covers each of the p-type implant regions. A floating diffusion is formed in one of the p-type implant regions.
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