Ion source device and ion beam generating method

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9153405
APP PUB NO 20130249400A1
SERIAL NO

13829573

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

An ion source device has a configuration in which a cathode is provided in an arc chamber having a space for plasma formation, and a repeller is disposed to face a thermal electron discharge face of the cathode by interposing the space for plasma formation therebetween. An external magnetic field that is induced by a source magnetic field unit is applied to the space for plasma formation in a direction parallel to an axis that connects the cathode and the repeller. An opening is provided in a place corresponding to a portion in the repeller with the highest density of plasma that is formed in the space for plasma formation, and an ion beam is extracted from the opening.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
SEN CORPORATIONTOKYO JAPAN

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sato, Masateru Tokyo, JP 18 193

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 Apr 6, 2027
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00