Silica crucible for pulling silicon single crystal and method of producing the same

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United States of America Patent

PATENT NO 9150447
APP PUB NO 20110011334A1
SERIAL NO

12919732

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Abstract

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There is provided a silica crucible for pulling a silicon single crystal, comprising silica glass and having a two-layer structure of an outer layer and an inner layer, wherein the inner layer, in a sectional side view of the crucible, has a wavy inner surface shape having mountain parts and valley parts at least between a start position and an end position for the pulling of a silicon single crystal in a silicon melt surface, and when a distance from an upper opening end of the crucible to the start position for the pulling of the silicon single crystal is 100, only a crucible portion from the upper opening end to a position within a range of 40 to 100 is crystalline.

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Patent Owner(s)

Patent OwnerAddress
SUMCO CORPORATION2-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 1058634

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sato, Tadahiro Akita, JP 38 214
Shimazu, Atsushi Akita, JP 16 125

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