Fast photoconductor
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United States of America Patent
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Sep 29, 2015
Grant Date -
May 24, 2012
app pub date -
Jan 27, 2012
filing date -
Mar 15, 2007
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Abstract
A photoconductor comprising a layer stack with a semiconductor layer photoconductive for a predetermined wavelength range between two semiconductor boundary layers with a larger band gap than the photoconductive semiconductor layer on a substrate, wherein the semiconductor boundary layers comprise deep impurities for trapping and recombining free charge carriers from the photoconductive semiconductor layer, and two electrodes connected to the photoconductive semiconductor layer, for lateral current flow between the electrodes through the photoconductive semiconductor layer.
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