Semiconductor device and manufacturing method of semiconductor device
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United States of America Patent
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Sep 22, 2015
Grant Date -
Jun 25, 2015
app pub date -
Mar 5, 2015
filing date -
Sep 28, 2012
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Abstract
A semiconductor device includes an electron transit layer formed on a substrate; an electron supply layer formed on the electron transit layer; a doping layer formed on the electron supply layer, the doping layer being formed with a nitride semiconductor in which an impurity element to become p-type and C are doped; a p-type layer formed on the doping layer, the p-type layer being formed with a nitride semiconductor in which the impurity element to become p-type is doped; a gate electrode formed on the p-type layer; and a source electrode and a drain electrode formed on the doping layer or the electron supply layer. The p-type layer is formed in an area immediately below the gate electrode, and a density of the C doped in the doping layer is greater than or equal to 1×1017 cm−3 and less than or equal to 1×1019 cm−3.
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