Integrated circuits and methods for fabricating integrated circuits with silicide contacts on non-planar structures
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United States of America Patent
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Sep 22, 2015
Grant Date -
Jun 19, 2014
app pub date -
Dec 13, 2012
filing date -
Dec 13, 2012
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Abstract
Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate and forming fins over the semiconductor substrate. Each fin is formed with sidewalls. The method further includes conformally depositing a metal film stack on the sidewalls of each fin. In the method, the metal film stack is annealed to form a metal silicide film over the sidewalls of each fin.
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