Method of producing a silicon-on-insulator article
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United States of America Patent
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Sep 22, 2015
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Oct 23, 2014
app pub date -
Nov 2, 2012
filing date -
Nov 4, 2011
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Abstract
A method of producing a silicon-on-insulator article, the method including: forming a first aluminum nitride layer thermally coupled to a first silicon substrate; forming a second aluminum nitride layer thermally coupled to a second substrate, the second substrate including at least a surface layer of silicon; bonding the first and second aluminum nitride layers of the first and second substrates together so that the first and second aluminum nitride layers are disposed between the first and second substrates; and removing most of the second substrate to leave a layer of silicon that is electrically insulated from but thermally coupled to the first silicon substrate by the first and second aluminum nitride layers.
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