Using tunnel junction and bias for effective current injection into terahertz magnon
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United States of America Patent
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Sep 15, 2015
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N/A
app pub date -
Nov 25, 2013
filing date -
Jul 3, 2006
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Abstract
An apparatus comprising a ferromagnetic conductive material including a magnon gain medium (MGM) and a tunnel junction coupled to the ferromagnetic conductive material are provided. The magnon gain medium (MGM) further comprises a conduction band that is split into two sub bands separated by an exchange energy gap, a first sub band having spin up, and a second sub band having spin down. The applied bias voltage is configured to shift the Fermi level of the external metallic contact with respect to the Fermi level of the ferromagnetic conductive material so that the injected electrons are configured to tunnel into the second sub band having spin down.
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