Semiconductor device
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United States of America Patent
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Nov 3, 2015
Grant Date -
Apr 2, 2015
app pub date -
Sep 25, 2014
filing date -
Sep 25, 2014
priority date (Note) -
Withdrawn
status (Latency Note)
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Abstract
A semiconductor device includes a semiconductor substrate, a surface of which is provided with: a source region having a first conductivity type is formed in a body region having a second conductivity type opposite to the first conductivity type; a main electrode connected to the source region and the body region; and a gate electrode, to which a voltage for controlling a current flowing through the main electrode is applied, and the semiconductor device includes: a recess formed in the surface of the semiconductor substrate, wherein the source region is exposed on an inner surface of the recess and the main electrode is connected to the source region at the inner surface of the recess.
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