Field effect transistor
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United States of America Patent
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Sep 15, 2015
Grant Date -
Oct 9, 2014
app pub date -
Apr 8, 2013
filing date -
Apr 8, 2013
priority date (Note) -
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Abstract
A field effect transistor includes a semiconductor substrate having a protrusion with at least one inclined surface, a gate insulator disposed at least on a portion of the inclined surface, and a gate conductor disposed on the gate insulator, wherein the semiconductor substrate comprises doped regions sandwiching a channel region, wherein the at least one inclined surface has a first crystal orientation in the channel region, and the inclined surface has an included angle to a vertical plane with a second crystal orientation. The hole mobility and the electron mobility are substantially the same in the channel region having a crystalline orientation off from the (110) crystal orientation.
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