Extreme ultraviolet (EUV) mask and method of fabricating the EUV mask
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United States of America Patent
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Sep 15, 2015
Grant Date -
Mar 5, 2015
app pub date -
Aug 30, 2013
filing date -
Aug 30, 2013
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Abstract
A Cu-containing material is provided as an absorber layer of an EUV mask. With the absorber layer of the Cu-containing material, the same lithography performance of a conventional absorber in 70 nm thickness of TaBN can be achieved by only a 30-nm thickness of the absorber layer according to the various embodiments of the present disclosure. Furthermore, the out-off-band (OOB) flare of the radiation light in 193-257 nm can be reduced so as to achieve the better lithography performance.
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