Method for manufacturing monocrystalline thin film and monocrystalline thin film device manufactured thereby
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United States of America Patent
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Sep 8, 2015
Grant Date -
Mar 31, 2011
app pub date -
Dec 8, 2010
filing date -
Jan 15, 2004
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Abstract
The present invention provides a method for manufacturing a monocrystalline film and a device formed by the above method, and according to the method mentioned above, lift-off of the monocrystalline silicon film is preferably performed and a high-purity monocrystalline silicon film can be obtained. A monocrystalline silicon substrate (template Si substrate) 201 is prepared, and on this monocrystalline silicon substrate 201, an epitaxial sacrificial layer 202 is formed. Subsequently, on this sacrificial layer 202, a monocrystalline silicon thin film 203 is rapidly epitaxially-grown using a RVD method, followed by etching of the sacrificial layer 202, whereby a monocrystalline silicon thin film 204 used as a photovoltaic layer of solar cells is formed.
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