Light-emitting diode and method for manufacturing thereof
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United States of America Patent
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Sep 8, 2015
Grant Date -
Feb 19, 2015
app pub date -
May 12, 2014
filing date -
Aug 16, 2013
priority date (Note) -
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Abstract
The disclosure provides a light-emitting diode (LED) and a method for manufacturing the same. The LED includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first current spreading layer, a current blocking having a plurality of nitrogen vacancies, and a second current spreading layer, wherein the second spreading layer includes a current spreading area and a current blocking area. The current blocking area is formed the nitrogen vacancies by high power sputtering on the current blocking area of the second semiconductor layer, so as to increase the resistance of the current blocking area and occur the efficiency of current blocking.
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