Formation of barrier layer on device using atomic layer deposition
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United States of America Patent
Stats
-
Sep 8, 2015
Grant Date -
Apr 26, 2012
app pub date -
Oct 18, 2011
filing date -
Oct 21, 2010
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The configuration of one or more barrier layers for encapsulating a device is controlled by setting parameters of atomic layer deposition (ALD). A substrate formed with the device is placed on a susceptor and exposed to multiple cycles of source precursor gas and reactant precursor gas injected by reactors of a deposition device. By adjusting one or more of (i) the relative speed between the susceptor and the reactors, (ii) configuration of the reactors, and (iii) flow rates of the gases injected by the reactors, the configuration of the layers deposited on the device can be controlled. By controlling the configuration of the deposited layers, defects in the deposited layers can be prevented or reduced.
First Claim
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Family
International Classification(s)
- 2011 Application Filing Year
- C23C Class
- 1852 Applications Filed
- 1328 Patents Issued To-Date
- 71.71 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 5 Citation Count
- C23C Class
- 13.95 % this patent is cited more than
- 10 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Mar 8, 2027 |
