Vertical cavity surface emitting laser with undoped top mirror
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United States of America Patent
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Sep 1, 2015
Grant Date -
Aug 23, 2012
app pub date -
Apr 30, 2012
filing date -
Oct 1, 2004
priority date (Note) -
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Abstract
A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate, and a periodically doped conduction layer is coupled to the undoped top minor. A periodically doped spacer layer is coupled to an active region. An undoped bottom minor coupled to the periodically doped spacer layer. A first intracavity contact is coupled to the periodically doped conduction layer and a second intracavity contact is coupled to the periodically doped spacer layer.
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