Semiconductor light emitting element
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United States of America Patent
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Sep 1, 2015
Grant Date -
Jun 19, 2014
app pub date -
Jun 13, 2012
filing date -
Jul 26, 2011
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Abstract
A semiconductor light emitting element includes an n-side semiconductor layer, an active layer, and a p-side semiconductor layer stacked in this order on a substrate. The active layer includes a multiple quantum well structure which includes a plurality of barrier layers and a plurality of well layers adjacent to the barrier layers. Among the barrier layers, a final barrier layer disposed closest to the p-side semiconductor layer and one or more barrier layers adjacent to the final barrier layer via the well layers respectively has a greater thickness than a thickness of a barrier layer on a side close to the n-side semiconductor layer.
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