Defect-controlling structure for epitaxial growth, light emitting device containing defect-controlling structure, and method of forming the same
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United States of America Patent
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Sep 1, 2015
Grant Date -
Jul 31, 2014
app pub date -
Mar 31, 2014
filing date -
Feb 15, 2011
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Abstract
A method for reducing dislocations or other defects in a light emitting device, such as light emitting diode (LED), by in-situ introducing nanoparticles into at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A light emitting device is provided, and nanoparticles are dispensed in-situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device.
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