Susceptor, vapor phase growth apparatus, and method of manufacturing epitaxial wafer
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United States of America Patent
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Sep 1, 2015
Grant Date -
Oct 2, 2014
app pub date -
Jun 11, 2014
filing date -
Jul 31, 2008
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Abstract
An aspect of the present invention relates to a susceptor comprising a counterbored groove receiving a semiconductor wafer in the course of manufacturing an epitaxial wafer by vapor phase growing an epitaxial layer on a surface of the semiconductor wafer, wherein a lateral wall of the counterbored groove is comprised of at least one flat portion and at least one protruding portion being higher than the flat portion, and a height of the flat portion is equal to or greater than a thickness of the semiconductor wafer.
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