Semiconductor device and method for manufacturing semiconductor device

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United States of America Patent

PATENT NO 9123728
APP PUB NO 20140131873A1
SERIAL NO

14160951

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Abstract

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A semiconductor device includes an insulation film formed above a semiconductor substrate, a conductor containing Cu formed in the insulation film, and a layer film formed between the insulation film and the conductor and formed of a first metal film containing Ti and a second metal film different from the first metal film, a layer containing Ti and Si is formed on the surface of the conductor.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akiyama, Shinichi Tokyo, JP 52 681
Kono, Takahiro Tokyo, JP 15 43
Owada, Tamotsu Yokohama, JP 40 325
Watatani, Hirofumi Tokyo, JP 41 489

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