Stacked semiconductor device and method of forming the same
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United States of America Patent
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Sep 1, 2015
Grant Date -
Sep 18, 2014
app pub date -
Jun 12, 2013
filing date -
Mar 13, 2013
priority date (Note) -
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Abstract
A stacked semiconductor device includes a first substrate. A multilayer interconnect is disposed over the first substrate. Metal sections are disposed over the multilayer interconnect. First bonding features are over the metal sections. A second substrate has a front surface. A cavity extends from the front surface into a depth D in the second substrate. The cavity has an interior surface. A stop layer is disposed over the interior surface of the cavity. A movable structure is disposed over the front surface of the second substrate and suspending over the cavity. The movable structure includes a dielectric membrane, metal units over the dielectric membrane and a cap dielectric layer over the metal units. Second bonding features are over the cap dielectric layer and bonded to the first bonding features. The second bonding features extend through the cap dielectric layer and electrically coupled to the metal units.
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