Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus
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United States of America Patent
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Sep 1, 2015
Grant Date -
Feb 20, 2014
app pub date -
Mar 7, 2012
filing date -
Mar 23, 2011
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Abstract
Provided are: forming an oxycarbonitride film, an oxycarbide film or an oxide film on a substrate by alternately performing a specific number of times: forming a first layer containing the specific element, nitrogen and carbon, on the substrate, by alternately performing a specific number of times, supplying a first source containing the specific element and a halogen-group to the substrate in a processing chamber, and supplying a second source containing the specific element and an amino-group to the substrate in the processing chamber; and forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, and an oxygen-containing gas and a hydrogen-containing gas to the substrate in the processing chamber.
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