Flash memory device with multi-level cells and method of writing data therein
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United States of America Patent
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Sep 1, 2015
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N/A
app pub date -
Sep 8, 2014
filing date -
Oct 30, 2006
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Abstract
In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.
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