Sulfonium salt, resist composition and patterning process
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United States of America Patent
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Sep 1, 2015
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Jul 17, 2014
app pub date -
Dec 11, 2013
filing date -
Jan 11, 2013
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Abstract
A sulfonium salt used in a resist composition which gives a pattern having a high resolution, and small roughness in the photolithography using a high energy beam as a light source, and further difficultly eluted in water in the immersion lithography, and a resist composition containing the sulfonium salt, and a patterning process using the resist composition, wherein the sulfonium salt is represented by the following general formula (1a),
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