Thermally controlled semiconductor optical waveguide
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United States of America Patent
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Sep 1, 2015
Grant Date -
Apr 12, 2012
app pub date -
Nov 12, 2010
filing date -
Oct 7, 2010
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Abstract
An apparatus includes a conductive or semiconductive substrate and a dielectric layer located directly thereon. A semiconductor layer is located directly on the dielectric layer. The semiconductor layer includes a ridge waveguide and a heater strip extending parallel to the ridge waveguide. The heater strip is electrically isolated from the ridge waveguide and is doped to carry a current therein about parallel to the ridge waveguide.
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