Multi pixel photo detector array of Geiger mode avalanche photodiodes
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United States of America Patent
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Sep 1, 2015
Grant Date -
Mar 22, 2012
app pub date -
Sep 15, 2011
filing date -
Sep 16, 2010
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Abstract
A multi-pixel photodetector array may include a semiconductor substrate having a back side and a front side, Geiger mode avalanche photodiodes (GM-APDs) on the semiconductor substrate, each including an anode contact, and a common cathode for the GM-APDs and having a first connection lead on the backside of the semiconductor substrate. The multi-pixel photodetector array may include a second connection lead, and a common anode on the front side of the semiconductor substrate and configured to couple in common the anode contacts of the GM-APDs to the second connection lead. Each GM-APD may be configured to generate, when a photon impinges thereon, a current pulse of different shape for discrimination by an external circuit connected to the common cathode and the common anode.
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