Silver based conductive layer for flexible electronics
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United States of America Patent
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Sep 1, 2015
Grant Date -
Jun 19, 2014
app pub date -
Dec 14, 2012
filing date -
Dec 14, 2012
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Abstract
Methods for making conducting stacks includes forming a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1.5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack to have an improved ductility property.
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