Hydrosilane derivative, method for producing same, and method for producing silicon-containing thin film
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United States of America Patent
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Sep 1, 2015
Grant Date -
May 16, 2013
app pub date -
May 30, 2011
filing date -
Jun 10, 2010
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Abstract
This invention aims at providing a material from which a silicon-containing thin film can be efficiently produced at a low temperature of 500° C. or less without using plasma or the like. The invention relates to produce a hydrosilane derivative represented by the general formula (1′) by reacting a chlorosilane derivative (3) with a compound M2Z (4) and produce the silicon-containing thin film by using the hydrosilane derivative as the material.
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