Ultrasonic transducer structure, ultrasonic transducer, and method of manufacturing ultrasonic transducer

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United States of America Patent

PATENT NO 9120127
APP PUB NO 20130169110A1
SERIAL NO

13616285

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Abstract

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An ultrasonic transducer structure, an ultrasonic transducer, and a method of manufacturing the ultrasonic transducer are provided. The ultrasonic transducer structure includes a driving wafer that includes a driving circuit; and an ultrasonic transducer wafer that is disposed on the driving wafer and includes a first wafer in which a via-hole is formed, a first insulating layer formed on the first wafer, a second wafer spaced apart from the first insulating layer, and a cavity formed between the first insulating layer and the second wafer.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD416 MAETAN-DONG YEONGTONG-GU SUWON-CITY GYEONGGI-DO 442-742

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chung, Seok-whan Hwaseong-si, KR 41 517
Hong, Seog-woo Yongin-si, KR 29 360
Jeong, Byung-gil Anyang-si, KR 27 392
Kim, Dong-kyun Suwon-si, KR 108 1601
Shin, Hyung-jae Seongnam-si, KR 30 396

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