Polylactide/silicon-containing block copolymers for nanolithography

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United States of America Patent

PATENT NO 9120117
SERIAL NO

13761763

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Abstract

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A diblock copolymer system that self-assembles at very low molecular weights to form very small features is described. One polymer in the block copolymer contains silicon, and the other polymer is a polylactide. The block copolymer may be synthesized by a combination of anionic and ring opening polymerization reactions. This block copolymer may form nanoporous materials that can be used as etch masks in lithographic patterning.

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Patent Owner(s)

Patent OwnerAddress
BOARD OF REGENTSTHE UNIVERSITY OF TEXAS SYSTEM201 W 7TH STREET AUSTIN TX 78701

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bates, Christopher M Austin, US 27 194
Cushen, Julia Austin, US 10 82
Ellison, Christopher John Austin, US 15 87
Willson, Carlton Grant Austin, US 23 1010

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