Light emitting element and method of making same
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United States of America Patent
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Aug 25, 2015
Grant Date -
Oct 16, 2014
app pub date -
Jun 27, 2014
filing date -
May 31, 2002
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Abstract
A light emitting element that includes a Ga2O3 substrate; an AlxGa1-xN buffer layer (0≦×≦1) formed on the Ga2O3 substrate; an n-GaN layer formed on the AlxGa1-xN buffer layer; an p-GaN layer formed on a portion of the n-GaN layer; an n-electrode formed on a portion of the n-GaN layer; and an p-electrode formed on the p-GaN layer.
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