Method of controlling the amount of Cu doping when forming a back contact of a photovoltaic cell
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United States of America Patent
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Aug 25, 2015
Grant Date -
Mar 6, 2014
app pub date -
Aug 31, 2012
filing date -
Aug 31, 2012
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Abstract
Methods for preparing an exposed surface of a p-type absorber layer of a p-n junction for coupling to a back contact in the manufacture of a thin film photovoltaic device are provided. The method can include: applying a treatment solution onto the exposed surface defined by the p-type absorber layer of cadmium telluride; and annealing the device with the p-type absorber layer in contact with the treatment solution to form a tellurium-enriched region in the p-type absorber layer at the exposed surface. The treatment solution comprises a chlorinated compound component that is substantially free from copper, a copper-containing metal salt, and a solvent.
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