Plasma processing apparatus and processing gas supply structure thereof
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United States of America Patent
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Aug 25, 2015
Grant Date -
Apr 19, 2012
app pub date -
Oct 12, 2011
filing date -
Oct 13, 2010
priority date (Note) -
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Abstract
There is provided a plasma processing apparatus for performing a process on a substrate by generating inductively coupled plasma. The plasma processing apparatus includes an upper lid, provided to cover a top opening of the processing chamber, having a dielectric window; multiple gas inlets provided at the upper lid; a high frequency coil positioned above the dielectric window at an outside of the processing chamber; and a gas supply device supported by the upper lid and provided under the dielectric window. Here, the gas supply device includes a single sheet of plate having through holes, multiple groove-shaped gas paths are formed between the plate and the dielectric window, end portions of the groove-shaped gas paths are opened to edges of the through holes and communicate with the gas inlets, and the gas supply device is configured to supply the processing gas into the processing chamber via the through holes.
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