Plasmonic lithography using phase mask
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United States of America Patent
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Aug 25, 2015
Grant Date -
Jun 25, 2015
app pub date -
Mar 28, 2014
filing date -
Sep 30, 2011
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Abstract
In the proposed plasmonic nanolithography technique a transparent mask is brought into physical contact with a metal on a substrate that is coated with a photoresist. The mask is not made of metal or other material that supports surface plasmons. The metal layer is exposed to radiation of a characteristic vacuum wavelength through the mask and the photoresist or through the substrate. The mask features and the vacuum wavelength of the radiation are chosen so that the radiation excites surface plasmons at the interface between the metal and the photoresist. The excitation of surface plasmons allows for the exposure and generation of features which are well-below the free space diffraction limit and small compared to the size of the features in the mask.
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