Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon
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United States of America Patent
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Aug 25, 2015
Grant Date -
Jan 27, 2011
app pub date -
Oct 1, 2010
filing date -
May 6, 2005
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Abstract
An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed.
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