Si-based compound and production method therefor

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United States of America Patent

PATENT NO 9115420
APP PUB NO 20120114517A1
SERIAL NO

13317848

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Abstract

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A thermoelectric material (and a method for producing the same) is essentially formed of an Mg2Si-based compound represented by the chemical formula Mg2-x-y-zAlxZnyMnzSi (x≠0, y≠0, z≠0, 0.04≦y/x≦0.6, and 0.013≦z/x≦0.075) wherein the total amount of Al, Zn, and Mn is 0.3 at % to 5 at %. Mg2-x-y-zAlxZnyMnz is provided in the form of an Mg alloy.

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Patent Owner(s)

Patent OwnerAddress
HITACHI CHEMICAL COMPANY LTD9-2 MARUNOUCHI 1-CHOME CHIYODA-KU TOKYO 1006606 ?1006606
NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY1 FURO-CHO CHIKUSA-KU NAGOYA-SHI AICHI 4648601 ?4648601

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hagio, Kento Nagoya, JP 1 2
Itoh, Takashi Nagoya, JP 124 1561

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