Methods of fabricating large-area, semiconducting nanoperforated graphene materials
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United States of America Patent
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Aug 25, 2015
Grant Date -
Dec 27, 2012
app pub date -
Aug 23, 2012
filing date -
Jan 26, 2010
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Abstract
Methods for forming a nanoperforated graphene material are provided. The methods comprise forming an etch mask defining a periodic array of holes over a graphene material and patterning the periodic array of holes into the graphene material. The etch mask comprises a pattern-defining block copolymer layer, and can optionally also comprise a wetting layer and a neutral layer. The nanoperforated graphene material can consist of a single sheet of graphene or a plurality of graphene sheets.
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