Methods and apparatus for controlling plasma in a plasma processing system
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United States of America Patent
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Aug 25, 2015
Grant Date -
Aug 22, 2013
app pub date -
Jun 22, 2012
filing date -
Feb 22, 2012
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Abstract
Methods and apparatus for processing a substrate in a multi-frequency plasma processing chamber are disclosed. The base RF signal pulses between a high power level and a low power level. Each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined power level and a second predefined power level as the base RF signal pulses. Alternatively or additionally, each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined RF frequency and a second predefined RF frequency as the base RF signal pulses. Techniques are disclosed for ascertaining in advance of production time the first and second predefined power levels and/or the first and second predefined RF frequencies for the non-base RF signals.
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