Method for manufacturing a mask having submillimetric apertures for a submillimetric electrically conductive grid, mask having submillimetric apertures and submillimetric electrically conductive grid
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United States of America Patent
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Aug 25, 2015
Grant Date -
Oct 6, 2011
app pub date -
Sep 24, 2009
filing date -
Sep 24, 2008
priority date (Note) -
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Abstract
A process for manufacturing a mask having submillimetric openings, in which: for a masking layer, a solution of colloidal nanoparticles that are stabilized and dispersed in a first solvent is deposited, the particles having a given glass transition temperature Tg, the drying of the masking layer is carried out at a temperature below the temperature Tg until a mask having a two-dimensional network of submillimetric openings is obtained with substantially straight mask area edges, in a zone referred to as a network mask zone, a zone free of masking is formed on the face by mechanical and/or optical removal of at least one peripheral portion of the network mask zone. The invention also relates to the network mask and the grid with an electroconductive solid zone that are thus obtained.
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