Niobium nitride and method for producing same, niobium nitride-containing film and method for producing same, semiconductor, semiconductor device, photocatalyst, hydrogen generation device, and energy system
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United States of America Patent
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Jul 14, 2015
Grant Date -
Feb 27, 2014
app pub date -
Nov 28, 2012
filing date -
Dec 7, 2011
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Abstract
The present invention is a niobium nitride which has a composition represented by the composition formula Nb3N5 and in which a constituent element Nb has a valence of substantially +5. The method for producing the niobium nitride of the present invention includes the step of nitriding an organic niobium compound by reacting the organic niobium compound with a nitrogen compound gas.
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International Classification(s)
- C01B:NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
- C25B:ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE ....
- C04B:LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREO....
- H01M:PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT....
- H01B:CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATER....
- B01J:CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, CO....
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