Structure electron beam inspection system for inspecting extreme ultraviolet mask and structure for discharging extreme ultraviolet mask
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United States of America Patent
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Aug 18, 2015
Grant Date -
Jan 30, 2014
app pub date -
Sep 27, 2013
filing date -
May 20, 2011
priority date (Note) -
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Abstract
A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.
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