Multi-level stack having multi-level contact and method
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United States of America Patent
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Aug 18, 2015
Grant Date -
Oct 10, 2013
app pub date -
Apr 4, 2012
filing date -
Apr 4, 2012
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Abstract
A method for forming a multi-level stack having a multi-level contact is provided. The method includes forming a multi-level stack comprising a specified number, n, of conductive layers and at least n−1 insulating layers. A via formation layer is formed over the stack. A first via is etched in the via formation layer at a first edge of the stack. A first multi-level contact is formed in the first via. For a particular embodiment, a second via may be etched in the via formation layer at a second edge of the stack and a second multi-level contact may be formed in the second via.
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