System and method for temperature control of a semiconductor wafer
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United States of America Patent
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Aug 18, 2015
Grant Date -
Jan 30, 2014
app pub date -
Jul 30, 2012
filing date -
Jul 30, 2012
priority date (Note) -
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Abstract
A semiconductor wafer is received at a first chamber that is at a first pressure level. The semiconductor wafer is at a first temperature and is heated, by a first heating module, to a second temperature while the pressure level of the first chamber is reduced from the first pressure level to a second pressure level. The semiconductor wafer is then provided to a supporting element of a second chamber which maintains a third pressure level that is closer to the second pressure level than to the first pressure level; the supporting element being at a third temperature that is closer to the second temperature than to the first temperature.
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