Base for a NPN bipolar transistor

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United States of America Patent

PATENT NO 9111955
APP PUB NO 20100129975A1
SERIAL NO

12697858

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Abstract

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An improved base for a NPN bipolar transistor. The base region is formed with Boron and Indium dopants for improved beta early voltage product and reduced base resistance.

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Patent Owner(s)

Patent OwnerAddress
INTERSIL AMERICAS INC1001 MURPHY RANCH ROAD MILPITAS CA 95035

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Beasom, James D Melbourne Village, US 105 1170

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