Pattern formation method
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United States of America Patent
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Aug 18, 2015
Grant Date -
Jan 8, 2015
app pub date -
Mar 10, 2014
filing date -
Jul 8, 2013
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Abstract
According to one embodiment, a pattern formation method includes forming a layer above an underlying layer. The layer includes a block copolymer. The method further includes forming a first phase including a first polymer and a second phase including a second polymer in the layer by phase-separating the block copolymer, and selectively removing the first phase by dry etching the layer using an etching gas including carbon monoxide.
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