Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
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United States of America Patent
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Aug 18, 2015
Grant Date -
Mar 21, 2013
app pub date -
Oct 23, 2012
filing date -
Jan 9, 1997
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Abstract
A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
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International Classification(s)
- C09K:MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED ....
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- C23G:CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CH....
- C23F:NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM S....
- G03F:PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNE....
- C11D:DETERGENT COMPOSITIONS
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