Reducing microelectromechanical systems stiction by formation of a silicon carbide layer
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United States of America Patent
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Aug 18, 2015
Grant Date -
Jan 22, 2015
app pub date -
Jul 19, 2013
filing date -
Jul 19, 2013
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Abstract
A mechanism is provided for reducing stiction in a MEMS device by forming a near-uniform silicon carbide layer on silicon surfaces using carbon from TEOS-based silicon oxide sacrificial films used during fabrication. By using the TEOS as a source of carbon to form an antistiction coating, all silicon surfaces can be coated, including those that are difficult to coat using standard self-assembled monolayer (SAM) processes (e.g., locations beneath the proof mass). Controlled processing parameters, such as temperature, length of time for annealing, and the like, provide for a near-uniform silicon carbide coating not provided by previous processes.
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