Method and structure for thin film photovoltaic materials using semiconductor materials

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United States of America Patent

PATENT NO 9105776
APP PUB NO 20070264488A1
SERIAL NO

11748444

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A photovoltaic device and related methods. The device has a nanostructured material positioned between an electron collecting electrode and a hole collecting electrode. An electron transporting/hole blocking material is positioned between the electron collecting electrode and the nanostructured material. In a specific embodiment, negatively charged carriers generated by optical absorption by the nanostructured material are preferentially separated into the electron transporting/hole blocking material. In a specific embodiment, the nanostructured material has an optical absorption coefficient of at least 103 cm−1 for light comprised of wavelengths within the range of about 400 nm to about 700 nm.

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Patent Owner(s)

Patent OwnerAddress
STION CORPORATION6321 SAN IGNACIO AVENUE SAN JOSE CA 95119

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Howard W H Saratoga, US 49 599

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