Rotatable and tunable heaters for semiconductor furnace
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United States of America Patent
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Aug 11, 2015
Grant Date -
Dec 12, 2013
app pub date -
Aug 12, 2013
filing date -
Mar 24, 2009
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Abstract
A method for forming a layer of material on a semiconductor wafer using a semiconductor furnace that includes a thermal reaction chamber having a heating system having a plurality of rotatable heaters for providing a heating zone with uniform temperature profile is provided. The method minimizes temperature variations within the thermal reaction chamber and promotes uniform thickness of the film deposited on the wafers.
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